 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AFT09MP055Nr1 aft09mp055gnr1 1 rf device data freescale semiconductor, inc. rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets designed for mobile two--way radio applications with frequencies from 764 to 941 mhz. the high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. narrowband performance (in freescale test circuit: 12.5 vdc, i dq(a+b) = 550 ma, t a =25 c, cw) frequency (mhz) g ps (db) d (%) p out (w) 870 17.5 69.0 57 800 mhz broadband performance (in freescale reference circuit: 12.5 vdc, i dq(a+b) = 800 ma, p in =1.5w,t a =25 c, cw) frequency (mhz) g ps (db) d (%) p out (w) 764 16.1 56.0 61 816 15.8 58.0 57 870 15.7 61.0 56 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 870 (1) cw >65:1 at all phase angles 3 (3 db overdrive) 17 no device degradation 1. measured in 764--870 mhz broadband test circuit. features ? characterized for operation from 764 to 941 mhz ? integrated input matching im proves broadband performance ? integrated esd protection ? broadband ? full power across the band (764--870 mhz) ? 225 c capable plastic package ? exceptional thermal performance ? extreme ruggedness ? high linearity for: tetra, ssb ? cost--effective over--molded plastic packaging ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13--inch reel. typical applications ? output stage 800 mhz band mobile radio ? output stage 700 mhz band mobile radio this document contains information on a preproduc tion product. specifications and informatio n herein are subject to change without notice. document number: AFT09MP055N rev. 0, 7/2013 freescale semiconductor technical data 764--941 mhz, 55 w, 12.5 v broadband rf power ldmos transistors AFT09MP055Nr1 aft09mp055gnr1 to--270wb--4 AFT09MP055Nr1 to--270wb--4 gull aft09mp055gnr1 figure 1. pin connections note: exposed backside of the package is the source terminal for the transistor. (top view) drain a drain b gate a gate b ? freescale semiconductor, inc., 2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +40 vdc gate--source voltage v gs --6.0, +12 vdc operating voltage v dd 19, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature range t c --40 to +150 c operating junction temperature range (1,2) t j --40 to +225 c total device dissipation @ t c =25 c derate above 25 c p d 625 3.13 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 78 c, 55 w cw, 12.5 vdc, i dq(a+b) = 550 ma, 870 mhz r jc 0.32 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) a, passes 150 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =40vdc,v gs =0vdc) i dss ? ? 3 adc zero gate voltage drain leakage current (v ds = 12.5 vdc, v gs =0vdc) i dss ? ? 2 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 270 adc) v gs(th) 1.6 2.1 2.6 vdc drain--source on--voltage (v gs =10vdc,i d =2.85adc) v ds(on) ? 0.14 ? vdc forward transconductance (4) (v gs =10vdc,i d =7.5adc) g fs ? 7 ? s 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued) AFT09MP055Nr1 aft09mp055gnr1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit dynamic characteristics (1) reverse transfer capacitance (v ds = 12.5 vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 1.9 ? pf output capacitance (v ds = 12.5 vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 61 ? pf input capacitance (v ds = 12.5 vdc, v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss (2) ? 690 ? pf functional tests (3) (in freescale narrowband test fixture, 50 ohm system) v dd = 12.5 vdc, i dq(a+b) = 550 ma, p in =1w,f=870mhz common--source amplifier output power p out ? 57 ? w drain efficiency d ? 69.0 ? % 1. each side of device measured separately. 2. value includes input matching network. 3. measurement made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (gn) parts. 4 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 typical characteristics 6 250 10 9 90 10 8 10 7 10 5 110 130 150 170 190 mttf (hours) 210 230 10 6 20 1 1000 0 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 100 15 figure 3. drain current versus drain--source voltage t j , junction temperature ( c) figure 4. mttf versus junction temperature -- cw note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. v dd = 12.5 vdc 0 2 v ds , drain--source voltage (volts) 5 v gs =3.75vdc 4 468 20 i ds , drain current (amps) 3.5 vdc t a =25 c 0 9 10 10 510 c oss c rss measured with 30 mv (rms ) ac @1mhz,v gs =0vdc 10 14 12 16 18 3.25 vdc 3vdc 2.5 vdc 7.71 amps i d =5.13amps 6.41 amps 10 5 10 4 c iss 8 7 3 2 1 note: each side of device measured separately. c iss value includes input matching network. note: measured with both sides of the transistor tied together. AFT09MP055Nr1 aft09mp055gnr1 5 rf device data freescale semiconductor, inc. 870 mhz narrowband production test fixture figure 5. AFT09MP055Nr1 narrowband test circuit component layout ? 870 mhz c1 cut out area c5 c7 b1 c9 l1 r1 c16 c14 r3 c15 c17 r2 l2 c10 b2 c2 c6 c8 c13 c12 b4 c4 l4 c19 c21 c23 r4 c22 c20 c18 l3 b3 c3 c11 c24 AFT09MP055N rev. 3 table 6. AFT09MP055Nr1 narrowband test circuit component designations and values ? 870 mhz part description part number manufacturer b1, b2 rf beads, short 2743019447 fair-rite b3, b4 rf beads, long 2743021447 fair-rite c1, c2, c3, c4 10 f chip capacitors grm55dr61h106ka88l murata c5, c6 0.1 f chip capacitors grm32mr71h104ja01l murata c7, c8 1 f chip capacitors grm31mr71h105ka88l murata c9, c10 68 pf chip capacitors atc100b680jt500xt atc c11, c12, c22, c23 56 pf chip capacitors atc100b560ct500xt atc c13 7.5 pf chip capacitor gqm2195c2e7r5bb15 murata c14, c15 7.5 pf chip capacitors atc100b7r5ct500xt atc c16, c17 12 pf chip capacitors atc600f120jt250xt atc c18, c19, c20, c21 9.1 pf chip capacitors gqm2195c2e9r1bb15 murata c24 3 pf chip capacitor atc600f3r0bt250xt atc l1, l2, l3, l4 2.5 nh inductors a01tklc coilcraft r1, r2 10 ? chip resistors crcw120610r0jnea vishay r3 2.0 ? chip resistor erj-14yj2r0u panasonic r4 5.9 ? chip resistor crcw12065r90fkea vishay pcb 0.030 , r =4.8 rf35a2 taconic 6 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 figure 6. AFT09MP055Nr1 narrowband test circuit schematic ? 870 mhz table 7. AFT09MP055Nr1 narrowband test circuit microstrips ? 870 mhz description microstrip description microstrip description microstrip rf input z1 z2 z3 c15 z4 z5 c14 z6 z7 z8 z9 z10 v bias c1 c5 c7 r1 z11 dut l3 z15 z17 z19 c11 z21 c22 z25 z26 c24 rf output v supply b1 l1 c16 c17 r3 c13 c9 r2 l2 c2 c6 c8 b2 c10 v bias z12 z13 c18 c3 b3 r4 c20 z23 z16 z18 z14 l4 c19 b4 c12 c4 v supply z20 z22 c23 z24 c21 z19, z20 0.007 0.400 microstrip z21, z22 0.025 0.400 microstrip z23*, z24* 0.885 0.120 microstrip z25 0.175 0.065 microstrip z26 0.901 0.065 microstrip z1 0.721 0.065 microstrip z2 0.595 0.065 microstrip z3*, z4* 0.670 0.120 microstrip z5, z6 0.025 0.400 microstrip z7, z8 0.025 0.400 microstrip z9, z10 0.295 0.400 microstrip z11, z12 0.075 0.400 microstrip z13, z14 0.075 0.400 microstrip z15, z16 0.100 0.400 microstrip z17, z18 0.213 0.400 microstrip * line length includes microstrip bends AFT09MP055Nr1 aft09mp055gnr1 7 rf device data freescale semiconductor, inc. typical characteristics ? 870 mhz 60 70 80 0 01234 40 20 60 p out , output power (watts) 80 90 0.5 1.5 2.5 3.5 4.5 100 v dd = 13.6 vdc, p in =1w f = 870 mhz v dd = 12.5 vdc p in =0.5w v dd = 12.5 vdc, p in =1w v dd = 13.6 vdc, p in =0.5w v gs , gate--source voltage (volts) figure 7. output power versus gate--source voltage at a constant input power figure 8. power gain, drain efficiency and output power versus input power p in , input power (watts) g ps , power gain (db) 12 16 0.1 30 50 40 0 20 19 20 1 d , drain efficiency (%) d p out v dd = 12.5 vdc, i dq(a+b) = 550 ma f = 870 mhz 15 14 13 10 p out , output power (watts) 80 70 50 30 10 18 17 3 g ps v dd = 12.5 vdc, i dq(a+b) = 550 ma, p out =57wavg. f mhz z source ? z load ? 870 1.40 -- j1.00 0.61 -- j0.14 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. narrowband series equivalent source and load impedance ? 870 mhz input matching network device under test output matching network z source z load 50 ? 50 ? 8 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 764--870 mhz broadband reference circuit table 8. 764--870 mhz broadband performance (in freescale reference circuit, 50 ohm system) v dd = 12.5 vdc, i dq(a+b) = 800 ma, p out =55w,t a =25 c, cw frequency (mhz) g ps (db) d (%) p out (w) 764 16.6 54.2 55 816 16.0 59.2 55 870 15.8 61.1 55 table 9. load mismatch/ruggedness (in freescale reference circuit) frequency (mhz) signal type vswr p in (w) test voltage, v dd result 764 cw >65:1 at all phase angles 3 (3 db overdrive) 15 no device degradation AFT09MP055Nr1 aft09mp055gnr1 9 rf device data freescale semiconductor, inc. 764--870 mhz broadband reference circuit c32 AFT09MP055N rev. 1 c28 c24 b1 l1 r3 c7* c5 r1 c9 c10 c1* c11* c12* c8* r4 c6 l2 b2 c33 c29 c25 b3 r5 c4 l3 c15 c13 c26 c30 c34 c36 c17 c20 c22 r2 c23 c21 c19 c2* c18 l4 c14 c16 c3 b4 r6 c27 c31 c35 c37 figure 10. AFT09MP055Nr1 broadband reference circuit component layout ? 764--870 mhz *c1, c2, c7, c8, c11 and c12 are mounted vertically. q1 table 10. AFT09MP055Nr1 broadband reference circuit component designations and values ? 764--870 mhz part description part number manufacturer b1, b2, b3, b4 rf beads, short 2743019447 fair-rite c1, c2, c3, c4 56 pf chip capacitors atc100b560gt1500xt atc c5, c6, c7, c8 10 pf chip capacitors atc600f100gt250xt atc c9, c10 8.2 pf chip capacitors atc600f8r2jt250xt atc c11 4.7 pf chip capacitor atc600f4r7gt250xt atc c12 5.6 pf chip capacitor atc600f5r6gt250xt atc c13, c14 15 pf chip capacitors atc600f150jt250xt atc c15, c16, c17, c18 3.9 pf chip capacitors atc600f3r9gt250xt atc c19 6.8 pf chip capacitor atc600f6r8gt250xt atc c20, c21 2.2 pf chip capacitors atc600f2r2gt250xt atc c22, c23 1.5 pf chip capacitors atc600f1r5gt250xt atc c24, c25, c26, c27 0.1 f chip capacitors grm32mr71h104ja01l murata c28, c29, c30, c31 1 f chip capacitors grm31mr71h105ka88l murata c32, c33, c34, c35 10 f chip capacitors grm55dr61h106ka88l murata c36, c37 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp l1, l2, l3, l4 12.5 nh chip inductors a04tklc coilcraft q1 rf power ldmos transistor AFT09MP055Nr1 freescale r1, r2, r3, r4, r5, r6 10 ? , chip resistors crcw201010r0fkef vishay pcb 0.030 , r =4.8 s1000-2 shengyi 10 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 figure 11. AFT09MP055Nr1 broadband reference circuit schematic ? 764--870 mhz rf input z1 z2 z5 v bias c24 r3 dut z13 c4 z23 z24 c19 rf output v supply l1 c32 z11 z12 c1 c11 z3 c12 z4 z6 c28 c7 c9 c10 c8 l2 r4 b1 b2 v bias c25 c33 c29 z7 z8 z9 z10 r1 c5 c6 z14 c15 c16 c13 c14 z15 z16 r2 z17 z18 c20 c21 c22 c23 l3 r5 b3 c26 c30 c34 c36 + z19 z20 l4 c3 v supply r6 b4 c27 c31 c35 c37 + c17 c18 z21 z22 c2 z25 * line length includes microstrip bends table 11. AFT09MP055Nr1 broadband reference circuit microstrips ? 764--870 mhz description microstrip description microstrip z1 0.157 0.051 microstrip z2 0.043 0.051 microstrip z3 0.052 0.051 microstrip z4 0.185 0.051 microstrip z5*, z6* 0.408 0.071 microstrip z7, z8 0.035 0.393 microstrip z9, z10 0.319 0.393 microstrip z11, z12 0.097 0.393 microstrip z13, z14 0.052 0.393 microstrip z15, z16 0.119 0.393 microstrip z17, z18 0.083 0.393 microstrip description microstrip z19, z20 0.190 0.071 microstrip z21*, z22* 0.500 0.071 microstrip z23 0.240 0.051 microstrip z24 0.280 0.051 microstrip z25 0.157 0.051 microstrip AFT09MP055Nr1 aft09mp055gnr1 11 rf device data freescale semiconductor, inc. typical characteristics ? 764--870 mhz broadband reference circuit 15.5 760 g ps f, frequency (mhz) figure 12. power gain, output power and drain efficiency versus frequency at a constant input power ? 12.5 vdc 14 18 50 68 64 60 56 65 60 55 d , drain efficiency (%) d g ps , power gain (db) 17.5 16.5 14.5 800 840 880 52 p out ,output power (watts) v dd = 12.5 vdc, p in =1.5w(avg.) i dq(a+b) = 800 ma p out 17 16 15 15.5 760 g ps f, frequency (mhz) figure 13. power gain, output power and drain efficiency versus frequency at a constant input power ? 13.6 vdc 14 18 50 70 65 60 55 65 60 55 d , drain efficiency (%) d g ps , power gain (db) 17.5 16.5 14.5 800 840 880 50 p out ,output power (watts) v dd = 13.6 vdc, p in =1w(avg.) i dq(a+b) = 800 ma p out 17 16 15 12 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 typical characteristics ? 764--870 mhz broadband reference circuit 50 20 30 40 50 0 0 v gs , gate--source voltage (volts) figure 14. output power versus gate--source voltage 80 1 2 34 p out , output power (watts) f = 816 mhz 0 0 detail a 0.5 1.5 2 2.5 40 30 f = 816 mhz p out , output power (watts) v gs , gate--source voltage (volts) 60 70 v dd = 12.5 vdc, p in =1.5w 20 10 v dd = 13.6 vdc, p in =1.5w detail a 10 v dd = 13.6 vdc, p in =1w 1 v dd = 12.5 vdc p in =1w v dd = 13.6 vdc, p in =1.5w v dd = 13.6 vdc, p in =1w v dd = 12.5 vdc, p in =1.5w v dd = 12.5 vdc p in =1w 100 120 figure 15. power gain, output power and drain efficiency versus input power and frequency p in , input power (watts) g ps , power gain (db) 13 15 14 3 g ps 40 0 20 18 17 16 19 80 1 p out v dd = 12.5 vdc, i dq(a+b) = 800 ma 764 mhz d 870 mhz d , drain efficiency (%) p out , output power (watts) 60 0.1 816 mhz 870 mhz 816 mhz 764 mhz 816 mhz 764 mhz 870 mhz AFT09MP055Nr1 aft09mp055gnr1 13 rf device data freescale semiconductor, inc. 764--870 mhz broadband reference circuit z o =2 ? z load f = 760 mhz f = 870 mhz f = 870 mhz f = 760 mhz z source v dd = 12.5 vdc, i dq(a+b) = 800 ma, p out =55wavg. f mhz z source ? z load ? 760 1.24 + j0.09 1.00 -- j0.81 770 1.30 + j0.15 1.00 -- j0.75 780 1.35 + j0.21 1.00 - j0.72 790 1.43 + j0.34 1.01 - j0.61 800 1.54 + j0.34 1.03 - j0.58 810 1.66 + j0.18 0.99 - j0.65 820 1.63 + j0.06 0.90 - j0.63 830 1.55 - j0.07 0.78 - j0.60 840 1.42 - j0.12 0.71 - j0.48 850 1.21 - j0.13 0.56 - j0.37 860 1.15 - j0.12 0.52 - j0.28 870 1.01 - j0.10 0.43 - j0.17 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 16. broadband series equivalent source and load impedance ? 764--870 mhz input matching network device under test output matching network z source z load 50 ? 50 ? 14 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 package dimensions AFT09MP055Nr1 aft09mp055gnr1 15 rf device data freescale semiconductor, inc. 16 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 AFT09MP055Nr1 aft09mp055gnr1 17 rf device data freescale semiconductor, inc. 18 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 AFT09MP055Nr1 aft09mp055gnr1 19 rf device data freescale semiconductor, inc. 20 rf device data freescale semiconductor, inc. AFT09MP055Nr1 aft09mp055gnr1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 july 2013 ? initial release of data sheet AFT09MP055Nr1 aft09mp055gnr1 21 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT09MP055N rev. 0, 7/2013 |
Price & Availability of AFT09MP055N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |